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上海斐商电子科技有限公司
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产品分类
供应TSU2N60M 信安 2N60
- 产品价格：
- 面议/ 1pcs
- 交易说明：
- 本站所有价格仅供参考，网上订单需书面确认后生效，期盼您来函来电。
- 厂 家：
- 信安
- 封 装：
- TO-251
- 批 号：
- 12+
- 数 量：
- 50000
产品咨询直线：021-38046966
产品详细说明
TSU2N60M
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| 品牌：韩国信安-TRUESEMI | 型号：TSU2N60M | 种类：绝缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 |
TSD2N60M/TSU2N60M600VN-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi's advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
1.9A, 600V, RDS(on) = 5.00 @VGS = 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
This Power MOSFET is produced using Truesemi's advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
1.9A, 600V, RDS(on) = 5.00 @VGS = 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
