深圳市五星达电子 （非本站正式会员）

类别：分离式半导体产品

家庭：JFET（结点场效应

系列：-

电流 - 漏极(Idss) @ Vds (Vgs=0)：30mA @ 15V

漏极至源极电压(Vdss)：25V

漏极电流 (Id) - 最大：-

FET 型：N 沟道

电压 - 击穿 (V(BR)GSS)：-

电压 - 切断 (VGS 关）@ Id：-

在 Vds 时的输入电容(Ciss) ：30pF @ 10V (VGS)

电阻 - RDS（开）：10 欧姆

安装类型：通孔

包装：*

封装/外壳：*

功率 - 最大：-

供应商设备封装：*

其它名称：*2N5434

Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 A , VDS = 0 V –32 –25 –25 –25
V
Gate-Source Cutoff Voltage VGS(off) VDS = 5 V, ID = 3 nA –4 –10 –3 –9 –1 –4
Saturation Drain Currentc IDSS VDS = 15 V, VGS = 0 V 150 100 30 mA
Gate Reverse Current IGSS
VGS = –15 V, VDS = 0 V –5 –200 –200 –200 pA
TA = 150
C –10 –200 –200 –200 nA
Gate Operating Currentd IG VDG = 10 V, ID = 10 mA –10
pA
Drain Cutoff Current ID( ff)
VDS = 5 V, VGS = –10 V 10 200 200 200
off)
TA = 150
C 20 200 200 200 nA
Drain-Source On-Voltage VDS(on)
VGS = 0 V ID = 10 mA
50 70 100 mV
Drain-Source On-Resistance rDS(on)
V, 2 5 7 10

Gate-Source Forward Voltaged VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductanced gfs
VDS = 5 V, ID = 10 mA
17 mS
Common-Source
Output Conductanced gos
S
f = 1 kHz
600 S
Drain-Source On-Resistance rds(on)
VGS = 0 V, ID = 0 mA
f = 1 kHz 5 7 10

Common-Source
Input Capacitance Ciss
VDS = 0 V, VGS = –10 V
20 30 30 30
pF
Common-Source
Reverse Transfer Capacitance Crss
S GS
f = 1 MHz
11 15 15 15
Equivalent Input
Noise Voltaged en
VDS = 5 V, ID = 10 mA
f = 1 kHz 3.5
nV⁄
/Hz
Switching
Turn On Timec
td(on) 2 4 4 4
Turn-tr VDD = 1.5 V, VGS(H) = 0 V
S S i hi Ci i
0.5 1 1 1
ns
Turn-Off Timec
td(off)
( )
See Switching Circuit 4 6 6 6
tf 18 30 30 30