深圳芝达顺发电子有限公司 （非本站正式会员）

MBN1200D33A HITACHI MODULE   

FEAEATTUURERES
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
 diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base)

CHARACTERISTICS  (Tc=25°C )
Item Symbol Unit Min. Typ. Max. Test Conditions
Collector Emitter Cut-Off Current I CES mA - - 1.0 VCE=1,200V,VGE=0V
Gate Emitter Leakage Current IGES nA - - ±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage VCE(sat) V - 2.7 3.4 IC=400A,VGE=15V
Gate Emitter Threshold Voltage VGE(TO) V - - 10 VCE=5V, IC =400mA
Input Capacitance Cies pF - 37,000 - VCE=10V,VGE=0V,f=1MHz
 Rise Time tr - 0.25 0.5 VCC=600V
Turn On Time ton - 0.4 0.7 RL=1.5W
 Fall Time tf - 0.25 0.35 RG=2.7W                              (4)
Switching Times
 Turn Off Time toff
             
ms
- 0.75 1.1 VGE=±15V
Peak Forward Voltage Drop VFM V - 2.5 3.5 IF=400A,VGE=0V
Reverse Recovery Time trr ms - - 0.4 IF=400A,VGE=-10V, di/dt=400A/ms
Thermal Impedance IGBT Rth(j-c) - - 0.06
FWD Rth(j-c)
°C/W
- - 0.14
Junction to case
Notes:(4)  RG  value is the test condition’s value for decision of the switching times, not recommended value.
                  Determine  the  suitable  RG  value after the measurement of switching waveforms
         (overshoot voltage,etc.)with appliance mounted.

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