深圳市华兴微电子有限公司 （非本站正式会员）

Features

• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use

Typical Applications

• Dual Output: Fo = 14.25 - 15.65 GHz
    Fo/2 = 7.125 - 7.825 GHz
• Pout: +9 dBm
• Phase Noise: -107 dBc/Hz @ 100 kHz Typ.
• No External Resonator Needed
• QFN Leadless SMT Package, 25 mm2

Functional Diagram

General Description

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.