深圳市福田区星河源电子展销柜 （非本站正式会员）

Low Capacitance Diode
Array for ESD Protection in
a Single Data Line
NUP1301ML3T1G is a MicroIntegration device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
 Low Capacitance (0.9 pF Maximum)
 Single Package Integration Design
 Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
 Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
 Ensures Data Line Speed and Integrity
 Fewer Components and Less Board Space
 Direct the Transient to Either Positive Side or to the Ground
 SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
 Pb−Free Package is Available*
Applications
 T1/E1 Secondary IC Protection
 T3/E3 Secondary IC Protection
 HDSL, IDSL Secondary IC Protection
 Video Line Protection
 Microcontroller Input Protection
 Base Stations
 I
2

C Bus Protection

MAXIMUM RATINGS (Each Diode) (TJ
 = 25C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR 70 Vdc
Forward Current IF 215 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Repetitive Peak Reverse Voltage VRRM 70 V
Average Rectified Forward Current (Note 1) 
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current IFRM 450 mA
Non−Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
IFSM
2.0
1.0
0.5
A