- IC型号
深圳市福田区星河源电子展销柜
- 营业执照:未审核身份证:已认证经营模式:经销商所在地区:广东 深圳企业网站:
http://cnxhm.dzsc.com/
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联系方式
- 地址:深圳市福田区中航路新亚洲国利大厦2817-2819,10个起送货上门
- 联系人:朱小姐
- 电话:0755-83294644
- 传真:0755-83296878
- 手机:13544236333
- QQ:
- E-mail:228294644@qq.com
友情链接
供应AP2301GN原装现货,价格优势
- 产品价格:
- ¥0.25/ 1pcs
¥0.25/ 10pcs
¥0.25/ 100pcs
¥0.25/ 1k
¥0.25/ 10k
- 交易说明:
- 原产原装,价格优势
- 配送说明:
- 货到付款
- 厂 家:
- APEC
- 封 装:
- SOT23
- 批 号:
- 2013(Rohs)
- 数 量:
- 99000
产品咨询直线:0755-83294644
产品详细说明
Electrical Characteristics@Tj
=25
o
C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
ΔBVDSS
/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance
2
VGS=-5V, ID=-2.8A - - 130 mΩ
VGS=-2.8V, ID=-2.0A - - 190 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V
gfs Forward Transconductance VDS=-5V, ID=-2.8A - 4.4 - S
IDSS Drain-Source Leakage Current (Tj=25
o
C) VDS=-20V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70
o
C) VDS=-16V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=±12V - - nA
Qg Total Gate Charge
2
ID=-2.8A - 5.2 10 nC
Qgs Gate-Source Charge VDS=-6V - 1.36 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC
td(on) Turn-on Delay Time
2
VDS=-15V - 5.2 - ns
t
r Rise Time ID=-1A - 9.7 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 19 - ns
t
f Fall Time RD=15Ω - 29 - ns
Ciss
Input Capacitance VGS=0V - 295 - pF
Coss Output Capacitance VDS=-6V - 170 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A
ISM Pulsed Source Current ( Body Diode )
1
- - -10 A
VSD Forward On Voltage
2
Tj=25℃, IS=-1.6A, VGS=0V - - -1.2 V