深圳市华兴微电子有限公司 (非本站正式会员)

深圳市华兴微电子有限公司

营业执照:已审核经营模式:所在地区:广东 深圳企业网站:
http://www.hxw-rf.com/

收藏本公司 人气:502596

联系方式

  • 地址:深圳市福田区华强广场A座14B
  • 联系人:王小姐
  • 电话:0755-83002107
  • 传真:0755-83335110
  • 手机:18476741579
  • QQ: QQ:2880509077 
  • E-mail:2880509077@qq.com

供应HMC950E

  • 供应HMC950E
产品价格:
3/ 1pcs
3/ 10pcs
3/ 100pcs
3/ 1k
3/ 10k
厂 家:
HITTITE
封 装:
绝对进口原装
批 号:
13+
数 量:
64000
 
点此询价

产品咨询直线:0755-83002107

产品详细说明

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
12 - 16 Power Amplifier, 4 Watt 28 44.5 - 36.5 +7V @ 2400mA Chip

Features

• Saturated Output Power: 
    +37 dBm @ 23% PAE
• High Output IP3: +44.5 dBm
• High Gain: 28 dB
• DC Supply: +7V @ 2400 mA
• No External Matching Required 
• Die Size: 3.23 x 3.45 x 0.1 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Telecom Infrastructure
• Military & Space

Functional Diagram

General Description

The HMC950 is a four stage GaAs pHEMT MMIC 4 Watt Power Amplifier which operates between 12 and 16 GHz. The HMC950 provides 28 dB of gain, +37 dBm of saturated output power, and 23% PAE from a +7V power supply. The HMC950 has exhibits linearity and is optimized for high capacity point to point and point to multi-point radio systems. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.