深圳市华兴微电子有限公司 （非本站正式会员）

Features

• High P1dB Output Power: +22 dBm
• High Psat Output Power: 24 dBm
• High Gain: 13 dB
• High Output IP3: +33.5 dBm
• Supply Voltage: +10 V @ 175 mA
• 50 Ohm matched Input/Output 
• Die Size: 2.82 x 1.50 x 0.1 mm

Typical Applications

• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics

General Description

The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Functional Diagram