| 高频硅器件 | General | Characteristics for Thermal Silicon Compound "ShinEtsu G746" |
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| Precautions and Recommendations for Mitsubishi Electric Silicon RF Power Devices |
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| Reliability concept for standard of Silicon RF Products |
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| Precaution for HPM series PKG & Recommended assembly method |
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| Si Module | Electro Static Sensitivity for RF Power Module RA-series |
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| Recommendation of Thermal Compound Applying Method for RA series RoHS Compliance Products |
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| RA-series (H2S/H2M Outline) Test Fixture |
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| Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 |
RA60H4452M1 |
RA60H4047M1 |
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| Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1 |
RA30H4552M1 |
RA30H4047M1 |
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| Recommendation of the output power control for RA45H7687M1 |
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RA45H7687M1 |
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| AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 |
RA45H8994M1 |
RA45H7687M1 |
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| Si Discrete | Test result of surge tolerance for RD-series |
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| Recommended mounted & precaution for RD07&RD02 series with SLP Package |
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| RD02MUS1B single-stage amplifier RF performance at f=400-470MHz,Vdd=7.2V |
RD02MUS1B |
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| RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz,Vdd=7.2/6.5V |
RD00HVS1 |
RD02MUS1B |
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| RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V |
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| RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V | RD00HVS1 |
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| RD01MUS1 RF Characteristics Vdd=3.6/4.5/7.2V data |
RD01MUS1 |
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| RD01MUS2 Single-Stage amplifier RF performance at f=450-527MHz,Vdd=7.2V |
RD01MUS2 |
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| RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V | RD07MUS2B |
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| RD07MUS2B single-stage amplifier efficiency matching RF performance at f=450-527MHz,Vdd=7.2V | RD07MUS2B |
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| RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V |
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| RD01MUS2 & RD07MUS2B RF characteristic data at f=400-470 MHz,Vdd=7.2V |
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RD07MUS2B | |||||
| RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V |
RD07MUS2B |
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| RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V |
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| RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V |
RD07MUS2B |
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| RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at f=763-870MHz,Vdd=7.2V | RD01MUS1 | RD07MUS2B | |||||
| RD07MUS2B TETRA single-stage amplifier at f=800-870MHz,Vdd=3.6V | RD07MUS2B |
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| RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V | RD05MMP1 |
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| RD09MUP2 single-stage amplifier RF performance at f=400-527MHz,Vdd=7.2V | RD09MUP2 |
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| RD12MVP1 single-stage amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V | RD12MVP1 |
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| RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board | RD04HMS2 |
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| RD04HMS2 single-stage amplifier with f=380-470MHz evaluation board | RD04HMS2 |
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| RD04HMS2 single-stage amplifier with f=890-950MHz evaluation board | RD04HMS2 |
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| RD35HUF2 single-stage amplifier with f=135-175MHz evaluation board | RD35HUF2 |
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| RD70HUF2 single-stage amplifier with f=135-175MHz evaluation board | RD70HUF2 |
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| RD35HUF2 single-stage amplifier with f=450-530MHz evaluation board | RD35HUF2 |
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| RD70HUF2 single-stage amplifier with f=450-530MHz evaluation board |
RD70HUF2 |
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| RD04HMS2 & RD70HUF2 two-stage amplifier at f=380-470MHz,Vdd=12.5V | RD04HMS2 |
RD70HUF2 |
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| RD35HUF2 single-stage amplifier with f=380-430MHz evaluation board | RD35HUF2 |
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| RD01MUS2 & RD07MUS2B RF characteristics data at135 to 175MHz. (Vdd=7.2V) | RD01MUS2 | RD07MUS2B | |||||
| RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2V(improved stability versions) | RD00HVS1 | RD02MUS1B | |||||
| RD04HMS2 & RD70HUF2 two-stage amplifier at f=450-530MHz.(Vdd=12.5V) | RD04HMS2 |
RD70HUF2 |
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| RD04HMS2 & RD70HUF2 two-stage amplifier at f=330-400MHz.(Vdd=12.5V) | RD04HMS2 |
RD70HUF2 |
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| RD01MUS2B single-stage amplifier with f=135-175MHz evaluation board | RD01MUS2B |
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| RD01MUS2B & RD07MUS2B TETRA 2stage amplifier RF characteristics data | RD01MUS2B |
RD07MUS2B |
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| RD01MUS1,RD07MUS2B TETRA 2stage amplifier RF characteristics data (f=800-870MHz) | RD01MUS1 |
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| RD01MUS2B single-stage amplifier with f=890-941MHz evaluation board | RD01MUS2B |
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| GaAs高频器件 | L/N General | Recommended assemble method for MITSUBISHI's 4-pin flat lead packaged device |
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| Recommended assembling method and general notes for plastic μ-X package GaAs FET |
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| Recommended assemble method for MITSUBISHI's leadless packaged devices |
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| Marking manner of MITSUBISHI GaAs FET |
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| f=0.9GHzband | RF Characteristics of MGF0913A in 800 to 900 MHz-band |
MGF0913A
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| f=1.9GHzband | RF characteristics data of MGF0915A for Freq=1.85-1.95GHz band |
MGF0915A |
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| RF characteristics data of MGF0921A for Freq=1.85-1.95GHz band |
MGF0921A |
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| RF characteristics data of MGF0951P for Freq=1.85-1.95GHz band |
MGF0951P |
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| RF characteristics data of MGF0952P for Freq=1.85-1.95GHz band |
MGF0952P |
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| f=2.1GHzband | RF characteristics data of MGF0906B for Freq.=2.11-2.17GHz band |
MGF0906B |
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| RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz band |
MGF0907B |
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| RF characteristics data of MGF0915A for Freq=2.11-2.17GHz band |
MGF0915A |
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| RF characteristics data of MGF0921A for Freq=2.11-2.17GHz band |
MGF0921A |
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| RF characteristics data of MGF0951P for Freq=2.11-2.17GHz band |
MGF0951P |
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| RF characteristics data of MGF0952P for Freq=2.11-2.17GHz band |
MGF0952P |
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| f=2.35GHz band | RF characteristics data of MGF0915A for Freq=2.3-2.4GHz band |
MGF0915A |
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| RF characteristics data of MGF0921A for Freq=2.3-2.4GHz band |
MGF0921A |
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| RF characteristics data of MGF0951P for Freq=2.3-2.4GHz band |
MGF0951P |
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| RF characteristics data of MGF0952P for Freq=2.3-2.4GHz band |
MGF0952P |
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| f=2.6GHzband | RF characteristics data of MGF0915A for Freq=2.5-2.6GHz band |
MGF0915A |
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| RF characteristics data of MGF0921A for Freq=2.5-2.6GHz band |
MGF0921A |
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| RF characteristics data of MGF0951P for Freq=2.5-2.6GHz band |
MGF0951P |
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| RF characteristics data of MGF0952P for Freq=2.5-2.6GHz ban |
MGF0952P |
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| f=3.5GHzband | RF Characteristics of MGF0920A in 3.4 to 3.6 GHz-band |
MGF0920A |
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- 非IC型号
深圳市中立信电子科技有限公司
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产品分类
IC芯片(80813)集成电路(IC)(294)电源IC(283)半导体存储器(70)场效应管MOSFET(66)可控硅IGBT(28)单片机(292)电阻器(26)电感器(3)电位器(9)电源/稳压器(1)微调电位器(1)石英晶体器件(79)连接器/接插件(1)开关(5)传感器(26)保险丝(85)放电管(1)变压器(2)继电器(1)放大器(105)光电子/光纤/激光(12)LED(55)PLC/可编程控制器(1)其他未分类(884)
IC集成
二极管(145)三极管(75)
- 超高频/高频三极管(18)
- 复合(达林顿)三极管(2)
- 其他三极管(55)
- 单向可控硅(晶闸管)(2)
- 双向可控硅(晶闸管)(16)
- 可控硅(晶闸管)模块(10)
- 其他电位器(9)
- 模块电源/电源模块(1)
- 其他微调/预调电位器(1)
- 背板连接器(1)
- 气体放电管(1)
- 其他继电器(1)
- 红外线发射管(1)
- 光电光耦合器(光耦)(11)
- LED器件(54)
- 其它LED相关产品（服务）(1)
- 整体式PLC(1)
供应MOSFET 功率晶体管 520MHZ RD01MUS1-T113
- 产品价格：
- ￥0.1/ 1pcs
- 配送说明：
- 合同金额1500元以上由供方承担，以下由需方自付.
- 厂 家：
- Mitsubishi
- 封 装：
- SOT-89
- 批 号：
- 13+
- 数 量：
- 9000
产品咨询直线：0755-23956688
产品详细说明
GaAs器件概要
三菱GaAs器件，支持实现IT社会高速互联网、视频点播、高速数据通信等通信网络正在迅速发展。三菱GaAs器件产品阵容丰富，应用于卫星、基站、移动电话手机等广泛领域，为实现IT社会提供最适宜的解决方案。
特长
高效率、低失真的特性，最适于W-CDMA基站内部匹配型用的中/大功率分立FETGaAsFET功率放大器模块适用于PDC系统的800MHz波段/1.5GHz波段，达到了令人自豪的同等级最小水平的0.03cc
容积仅为0.1cc的发射模块，极大地促进了三倍频带移动电话终端的小型化
主要用途
移动电话终端移动电话基站
卫星搭载用器件
