- IC型号
联系方式
- 地址：深圳市宝安区西乡宝民二路臣田伟信达大楼7楼711
- 联系人：黄小姐
- 电话：075527839558
- 手机：18820461190
- QQ：
- E-mail：103889969@qq.com
供应AO3401A SOT-23-3L大封装 大电流
- 产品价格：
- ￥0.5/ 1pcs
￥0.4/ 10pcs
￥0.3/ 100pcs
￥0.2/ 1k
￥0.16/ 10k
- 交易说明：
- 移动电源三合一单片机专用
- 厂 家：
- UMOSMEI
- 封 装：
- SOT-23-3L
- 批 号：
- 14+
- 数 量：
- 3000000
产品咨询直线：075527839558
产品详细说明
FET特点：逻辑电平门
漏极至源极电压(Vdss)：30V
Id时的Vgs(th)（最大）：1.5V @ 250μA
闸电荷(Qg) @ Vgs：13nC @ 4.5V
在Vds时的输入电容(Ciss)：1.4W
安装类型：表面贴装
英文描述：P-Channel Enhancement Mode Field Effect Transistor
中文描述：的P -沟道增强型场效应晶体管
P-Channel Enhancement Mode MOSFET
Feature -30V/-4.2A, RDS(ON)=55mΩ(MAX) @VGS = -10V.
RDS(ON)= 70mΩ(MAX) @VGS = -4.5V.
RDS(ON)=120mΩ(MAX) @VGS = -2.5V.
Super High dense cell design for extremely low RDS(ON)
Reliable and Rugged
SOT-23-3L for Surface Mount Package
SOT-23-3L
Applications
● Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings T A=25 Unless Otherwise noted ℃
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous ID -4.2 A
Electrical Characteristics T A=25 Unless Otherwise noted ℃
Parameter Symbol Test Conditions Min Typ. Max Units
Off Characteristics
Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -30 - - V
Zero-Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V - - -1 μA
Gate Body Leakage Current, Forward IGSSF VGS=12V, VDS=0V - - 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS=-12V, VDS=0V - - -100 nA
On Characteristics
Gate Threshold Voltage VGS(th) VGS= VDS, ID=-250μA -0.7 - -1.3 V
Static Drain-source On-Resistance RDS(ON) VGS =-10V, ID =-4.2A - 50 55 mΩ
VGS =-4.5V, ID =-4.0A - 60 70 mΩ
VGS =-2.5V, ID =-1.0A - 80 120 mΩ
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage VSD VGS =0V, IS=-1.0A -1.0 V