深圳市云迪科技有限公司 （非本站正式会员）

FEATURES
· Voltage Supply 
 -1.8V device(K9F1G08Q0A): 1.70V~1.95V
 -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
· Organization
 - Memory Cell Array : (128M + 4,096K)bit x 8bit
 - Data Register : (2K + 64)bit x8bit 
 - Cache Register : (2K + 64)bit x8bit 
· Automatic Program and Erase
 - Page Program : (2K + 64)Byte
 - Block Erase : (128K + 4K)Byte
· Page Read Operation
 - Page Size : 2K-Byte
 - Random Read : 25ms(Max.)
 - Serial Access : 30ns(Min.) : (K9F1G08U0A)
 50ns(Min.) : (K9F1G08Q0A) 
128M x 8 Bit NAND Flash Memory
· Fast Write Cycle Time
 - Program time : 300ms(Typ.)
 - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
 - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
 - Endurance : 100K Program/Erase Cycles
 - Data Retention : 10 Years
· Command Register Operation
· Cache Program Operation for High Performance Program
· Intelligent Copy-Back Operation
· Unique ID for Copyright Protection
· Package : 
 - K9F1G08U0A-YCB0/YIB0
 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
 - K9F1G08U0A-VIB0
 48 - Pin WSOP I (12X17X0.7mm)
 - K9F1G08U0A-PCB0/PIB0
 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
 - K9F1G08U0A-FIB0
 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
 * K9F1G08U0A-V,F(WSOPI ) is the same device as 
 K9F1G08U0A-Y,P(TSOP1) except package type.