上海斐商电子科技有限公司 （非本站正式会员）

IRF640NPBF

主要应用领域：低压电子镇流器，电视剧枕校

Advanced Process Technology

Dynamic dv/dt Rating

175ìC Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

Lead-Free

Description

Fifth   Generation   HEXFET    Power   MOSFETs   from

International   Rectifier   utilize   advanced   processing techniques  to  achieve  extremely  low    on-resistance  per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely  efficient  and  reliable  device  for  use  in  a  wide variety of applications.

The TO-220 package is universally preferred for   all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low  package  cost  of  the  TO-220  contribute  to  its  wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating  die  sizes  up  to  HEX-4.  It  provides  the highest  power  capability  and  the  lowest  possible  on- resistance  in  any  existing  surface  mount  package.  The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for low- profile application.