深圳市高宏达电子有限公司 （非本站正式会员）

Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.54
0.43
A
Pulsed drain current
TA=25°C
ID puls 2.2
Gate source voltage VGS ± 20 V
Power dissipation
TA=25°C
Ptot 0.36 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
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BSS670S2L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
RthJS - - 290 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
350
300
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=1mA
V(BR)DSS 55 - - V
Gate threshold voltage, VGS = VDS
ID=2.7μA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=55V, VGS=0, Tj=25°C
VDS=55V, VGS=0, Tj=150°C
IDSS
-
-
0.01
10
1
100
μA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS - 1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=270mA
RDS(on) - 430 825 mW
Drain-source on-state resistance
VGS=10V, ID=270mA
RDS(on) - 346 650
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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BSS670S2L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS³2*ID*RDS(on)max,
ID=0.54A
0.6 1.2 - S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
- 56 75 pF
Output capacitance Coss - 13 18
Reverse transfer capacitance Crss - 7 10
Turn-on delay time td(on) VDD=30V, VGS=4.5V,
ID=0.54A,
RG=130W
- 9 14 ns
Rise time tr - 25 37
Turn-off delay time td(off) - 21 31
Fall time tf - 24 32
Gate Charge Characteristics
Gate to source charge Qgs VDD=40V, ID=0.54A - 0.19 0.25 nC
Gate to drain charge Qgd - 0.57 0.86
Gate charge total Qg VDD=40V, ID=0.54A,
VGS=0 to 10V
- 1.7 2.26
Gate plateau voltage V(plateau) VDD=40V, ID=0.54A - 3.1 - V
Reverse Diode
Inverse diode continuous
forward current
IS TA=25°C - - 0.38 A
Inv. diode direct current, pulsed ISM - - 2.2
Inverse diode forward voltage VSD VGS=0, IF=0.54A - 0.8 1.1 V
Reverse recovery time trr VR=30V, IF=lS,
diF/dt=100A/μs
- 51 64 ns
Reverse recovery charge Qrr - 22 28 nC       深圳市福田区高宏达电子商行是国内较早经营片状元器件的专业商行之一,一直坚持以诚为信，以质为本的精神作为商行发展的宗旨。现经营的元器件主要是日本、　欧美产品：AVX、SPRAGUS、MURATA、PHILIPS、HITACHI、NEC、HP、IR、ST、NXP、KEC、INFINEON、ON等国外知名品牌。　质量上乘，品质一流。　产品品种有：电感、电阻、钽电容、二三极管、微调电容及电阻、铝电解电容等片状元器件。　品种齐全，常备现货，热情欢迎广大客户垂询惠顾。