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供应MBR140LSF半导体产品,TAYCHIPST台芯半导体产品MBR140LSF原装现货

  • 供应MBR140LSF半导体产品,TAYCHIPST台芯半导体产品MBR140LSF原装现货
产品价格:
电话咨询/ 1pcs
交易说明:
全新原装房间现货!!
厂 家:
TAYCHIPST
封 装:
SOD-123FL
批 号:
2012
数 量:
55000
 
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产品咨询直线:755-82812160

产品详细说明

描述 DIODE SCHOTTKY 1A 40V SOD-123FL
RoHS 无铅 / 符合限制有害物质指令(RoHS)规范要求
标准包装 3000
类别 半导体产品
家庭 单二极管/整流器
系列 -
二极管类型 肖特基
电压 - (Vr)(最大) 40V
电流 - 平均整流 (Io) 1A
电压 - 在 If 时为正向 (Vf)(最大) 40A
反向恢复时间(trr) -
安装类型 贴板
封装/外壳 SMD/REEL
供应商设备封装 SOD-123FL
包装 带卷 (TR)
MBR140SFT1
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
Using the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ac/dc and dc−dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical. These state−of−the−art devices have the following features:
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94, V−0
• Package Designed for Optimal Automated Board Assembly
• This device is manufactured with a Pb−Free external lead finish only.
• ESD Ratings: Machine Model, C
ESD Ratings: Human Body Model, 3B
Mechanical Characteristics
• Reel Options: MBR130LSFT1 = 3,000 per 7, reel/8 mm tape
• Device Marking: L3L
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 RequirementsPeak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TL = 117°C) IO 1.0 A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 110°C)
IFRM 2.0 A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM 40 A
Storage Temperature Tstg −55 to 150 °C
Operating Junction Temperature TJ −55 to 125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/s

 

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