深圳市华兴微电子有限公司 （非本站正式会员）

Features

• P1dB Output Power: +22 dBm
• Gain: 22 dB
• Output IP3: +37 dBm
• Cascadable 50 Ohm I/Os
• Single Supply: +5V

Typical Applications

• Cellular / PCS / 3G 
• Fixed Wireless & WLAN 
• CATV, Cable Modem & DBS 
• Microwave Radio & Test Equipment 
• IF & RF Applications

Functional Diagram

General Description

The HMC580ST89(E) is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26 dBm output power. The HMC580ST89(E) offers 22 dB of gain with a +37 dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.