深圳市高宏达电子有限公司 （非本站正式会员）

DIODE)
Rating Symbol Value Unit
Reverse Voltage V R 70 Vdc
Forward Current I F 215 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
Repetitive Peak Reverse Voltage V RRM 70 V
Average Rectified Forward Current (1)
I F(AV) 715 mA
(averaged over any 20 ms period)
Repetitive Peak Forward Current I FRM 450 mA
Non–Repetitive Peak Forward Current I FSM A
t = 1.0 μ s 2.0
t = 1.0 ms 1.0
t = 1.0 S 0.5
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation P D 225 mW
FR–5 Board, (1) T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D 300 mW
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I (BR) = 100 μA) V (BR) 70 — Vdc
Reverse Voltage Leakage Current (V R = 70 Vdc) I R — 2.5 μAdc
(V R = 25 Vdc, T J = 150°C) –– 30
(V R = 70 Vdc, T J = 150°C) –– 50
Diode Capacitance
C D — 1.5 pF
(V R = 0, f = 1.0 MHz)
Forward Voltage (I F = 1.0 mAdc) V F –– 715 mVdc
(I F = 10 mAdc) — 855
(I F = 50 mAdc) –– 1000
(I F = 150 mAdc) –– 1250
Reverse Recovery Time
(I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100Ω ) (Figure 1)
t rr — 6.0 ns
Forward Recovery Voltage
(I F = 10 mA, t r = 20 ns)
V FR — 1.75 V
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
. LBAV99LT1G
LBAV99LT3G
A7 3000 Tape & Reel
10000 Tape & Reel
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