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ESH3B二极管原装热卖,专销TAYCHIPST台芯半导体ESH3B二极管

  • ESH3B二极管原装热卖,专销TAYCHIPST台芯半导体ESH3B二极管
产品价格:
电话咨询/ 1pcs
交易说明:
全新原装现货库存
厂 家:
TAYCHIPST
封 装:
SOD-123FL
批 号:
2012
数 量:
50000
 
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产品咨询直线:755-82812160

产品详细说明

100V-200V 3.0A
ESH3B THRU ESH3D
SOD-123FL
1 of 2 Web Site: www.taychipst.com
FEATURES
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
• Glass passivated chip junction SOD-123FL
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case:
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT
Device marking code EHB EHC EHD
Maximum repetitive peak reverse voltage VRMM 100 150 200 V
Maximum RMS voltage VRMS 70 105 140 V
Maximum DC blocking voltage VDC 100 150 200 V
Maximum average forward rectified current (Fig. 1) IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 125 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C
Note:
(1) Units mounted on P.C.B. with 12.0 x 12.0 mm land areas
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage (1) IF = 3 A VF 0.90 V
Maximum DC reverse current at rated

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具体铺位: 门市:深圳市福田区中航路新亚洲1C010/公司:深圳市福田区深南中路华强佳和大厦B座2703 仓库位置: 广东深圳深圳市福田区新亚洲1C010/新亚洲4A036
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